Enhanced transient photovoltaic characteristics of core–shell ZnSe/ZnS/L-Cys quantum-dot-sensitized TiO<sub>2</sub> thin-film<xref rid="cpb_27_6_067305_fn1" ref-type="fn">*</xref><fn id="cpb_27_6_067305_fn1"> <label>*</label> <p>Project supported by the Natural Science Foundation of Hebei Province, China (Grant Nos. E2013203296 and E2017203029).</p> </fn>

Enhanced transient photovoltaic characteristics of core–shell ZnSe/ZnS/L-Cys quantum-dot-sensitized TiO₂ thin-film* *

Project supported by the Natural Science Foundation of Hebei Province, China (Grant Nos. E2013203296 and E2017203029).

Li Kui-Ying^†, Ren Lun, Shen Tong-De

(color online) SPV spectra of the as-prepared nano-TiO₂ thin film with three layers, ZnSe QDs, and ZnSe QD-sensitized nano-TiO₂ thin film obtained at the sensitized temperature of 60 °C for 5.0 h. Inset (a) shows a schematic diagram of the home-built setup for stationary SPV spectrum measurements, in which light is generated using a 500-W Xenon lamp and regulated to 23 Hz with a light chopper. Inset (b) displays the SPV spectra of the ZnSe QD-sensitized nano-TiO₂ thin film with various substrate thin film layers. Inset (c) presents the SPV spectra of the ZnSe QD-sensitized nano-TiO₂ thin film obtained at different sensitized temperatures. Inset (d) exhibits the SPV spectra of the ZnSe QD-sensitized nano-TiO₂ thin film obtained at different sensitized times. Capital L in each of insets (b)–(d) refers to the number of nano-TiO₂ coating layers.