Enhanced transient photovoltaic characteristics of core–shell ZnSe/ZnS/L-Cys quantum-dot-sensitized TiO<sub>2</sub> thin-film<xref rid="cpb_27_6_067305_fn1" ref-type="fn">*</xref><fn id="cpb_27_6_067305_fn1"> <label>*</label> <p>Project supported by the Natural Science Foundation of Hebei Province, China (Grant Nos. E2013203296 and E2017203029).</p> </fn>

Enhanced transient photovoltaic characteristics of core–shell ZnSe/ZnS/L-Cys quantum-dot-sensitized TiO₂ thin-film* *

Project supported by the Natural Science Foundation of Hebei Province, China (Grant Nos. E2013203296 and E2017203029).

Li Kui-Ying^†, Ren Lun, Shen Tong-De

(color online) TPV spectra of the as-prepared nano-TiO₂ thin film with three layers, ZnSe QDs, and ZnSe QD-sensitized nano-TiO₂ thin film obtained at the sensitized temperature of 60 °C for 5.0 h. Inset (a) illustrates the home-build setup for TPV spectrum measurement, where the sample is illuminated by a laser with a wavelength of 355 nm and an intensity of 20 μJ. Inset (b) shows the TPV spectra of the ZnSe QD-sensitized nano-TiO₂ thin film with various layers of the substrate thin film. Inset (c) shows the TPV spectra of the ZnSe QD-sensitized nano-TiO₂ thin film obtained at different sensitized temperatures. Inset (d) is the TPV spectra of the ZnSe QD-sensitized nano-TiO₂ thin film obtained at different sensitized times. Capital L in each of insets (b)–(d) represents the number of nano-TiO₂ coating layers.