Electronic transport properties of Co cluster-decorated graphene<xref rid="cpb_27_6_067304_fn1" ref-type="fn">*</xref><fn id="cpb_27_6_067304_fn1"> <label>*</label> <p>Project supported by the National Basic Research Program of China (Grant Nos. 2013CB921900 and 2014CB920900), the National Natural Science Foundation of China (Grant No. 11374021), and the National Key Research and Development Program of China (Grant No. 2018YFA0305604).</p> </fn>

Electronic transport properties of Co cluster-decorated graphene* *

Project supported by the National Basic Research Program of China (Grant Nos. 2013CB921900 and 2014CB920900), the National Natural Science Foundation of China (Grant No. 11374021), and the National Key Research and Development Program of China (Grant No. 2018YFA0305604).

Cai Chao-Yi¹, Chen Jian-Hao^{1, 2, †}

(color online) (a) Gate dependence of the resistivity at different temperatures for Run7. Temperature is labeled using different colors. Inset: Gate dependence of the resistivity of pristine graphene at T = 7.1 K and T = 300 K. (b) Temperature dependence of the resistivity at Dirac point for Run7. Inset: ρ_Dirac versus 1/T in a semi-log plot. The solid line is the thermal activation model fitting as described in the main text.