Electronic transport properties of Co cluster-decorated graphene*

Project supported by the National Basic Research Program of China (Grant Nos. 2013CB921900 and 2014CB920900), the National Natural Science Foundation of China (Grant No. 11374021), and the National Key Research and Development Program of China (Grant No. 2018YFA0305604).

Cai Chao-Yi1, Chen Jian-Hao1, 2, †
       

(color online) (a) The exponent δ versus Vshift which represents the shift of the Dirac point due to Co-absorption. The dashed line indicates jump of the exponents between the pristine resistivity data and the added resistivity from Co-absorption. (b) Vshift versus (1/μ − 1/μ0). The solid line is the power-law fit to the equation, Vshift ∼ (1/μ − 1/μ0)b.