Electronic transport properties of Co cluster-decorated graphene<xref rid="cpb_27_6_067304_fn1" ref-type="fn">*</xref><fn id="cpb_27_6_067304_fn1"> <label>*</label> <p>Project supported by the National Basic Research Program of China (Grant Nos. 2013CB921900 and 2014CB920900), the National Natural Science Foundation of China (Grant No. 11374021), and the National Key Research and Development Program of China (Grant No. 2018YFA0305604).</p> </fn>

Electronic transport properties of Co cluster-decorated graphene* *

Project supported by the National Basic Research Program of China (Grant Nos. 2013CB921900 and 2014CB920900), the National Natural Science Foundation of China (Grant No. 11374021), and the National Key Research and Development Program of China (Grant No. 2018YFA0305604).

Cai Chao-Yi¹, Chen Jian-Hao^{1, 2, †}

(color online) (a) The conductivity (σ) versus gate voltage (V_g) curves for the pristine sample and seven different doping concentrations obtained at 7.1 K in UHV. Inset: Schematics of the experimental setup. (b) Resistivity as a function of V_g − V_min at different doping concentrations. Inset: Added resistivity as a function of V_g − V_min at different areal dosage normalized to V_shift = |V_g,min − V_0,min|. The color code is the same for the inset and the main graph of Fig. 1(b).