Improved performance of Au nanocrystal nonvolatile memory by N2-plasma treatment on HfO2 blocking layer<xref rid="cpb_27_6_067303_fn1" ref-type="fn">*</xref><fn id="cpb_27_6_067303_fn1"> <label>*</label> Project supported by the High Level Talent Project of Xiamen University of Technology, China (Grant Nos. YKJ16012R and YKJ16016R) and the National Natural Science Foundation of China (Grant No. 51702271). </fn>

Improved performance of Au nanocrystal nonvolatile memory by N₂-plasma treatment on HfO₂ blocking layer* *

Project supported by the High Level Talent Project of Xiamen University of Technology, China (Grant Nos. YKJ16012R and YKJ16016R) and the National Natural Science Foundation of China (Grant No. 51702271).

Wang Chen^{1, †}, Xu Yi-Hong², Chen Song-Yan³, Li Cheng³, Wang Jian-Yuan³, Huang Wei³, Lai Hong-Kai³, Guo Rong-Rong¹

(color online)(a) Capacitance-voltage and (b) current-voltage characteristics of MOS capacitors with and without N₂-plasma treatment on HfO₂ film.