Enhanced photoresponse performance in Ga/Ga2O3 nanocomposite solar-blind ultraviolet photodetectors<xref rid="cpb_27_6_067301_fn1" ref-type="fn">*</xref><fn id="cpb_27_6_067301_fn1"><label>*</label>Project supported by the National Natural Science Foundation of China (Grant Nos. 11674405 and 11675280) and the Fund from the Laboratory of Microfabrication in Institute of Physics, Chinese Academy of Sciences.</fn>

Enhanced photoresponse performance in Ga/Ga₂O₃ nanocomposite solar-blind ultraviolet photodetectors**

Project supported by the National Natural Science Foundation of China (Grant Nos. 11674405 and 11675280) and the Fund from the Laboratory of Microfabrication in Institute of Physics, Chinese Academy of Sciences.

Cui Shu-Juan^{1, 2}, Mei Zeng-Xia^{1, †}, Hou Yao-Nan¹, Chen Quan-Sheng^{1, 2}, Liang Hui-Li¹, Zhang Yong-Hui^{1, 2}, Huo Wen-Xing^{1, 2}, Du Xiao-Long^{1, 2, ‡}

(color online) Electric field distributions of Ga NSs in Ga₂O₃ matrix with different diameters and gaps: (a) diameter = 10 nm and gap = 20 nm; (b) diameter = 10 nm and gap = 10 nm; (c) diameter = 20 nm and gap = 20 nm; (d) diameter = 20 nm and gap = 10 nm.