Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device<xref rid="cpb_27_6_067204_fn1" ref-type="fn">*</xref><fn id="cpb_27_6_067204_fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11574243 and 11174231).</p></fn>

Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device**

Project supported by the National Natural Science Foundation of China (Grant Nos. 11574243 and 11174231).

He Xiong, Sun Zhi-Gang^†

(color online) (a) V–I characteristic curve of the In/n-GaAs/In device under different magnetic fields and 4-LEDs intensity of illumination, with inset showing magnified part of the curves. (b) Calculated MR–I and S–I curves under 1 T.