Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device<xref rid="cpb_27_6_067204_fn1" ref-type="fn">*</xref><fn id="cpb_27_6_067204_fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11574243 and 11174231).</p></fn>

Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device**

Project supported by the National Natural Science Foundation of China (Grant Nos. 11574243 and 11174231).

He Xiong, Sun Zhi-Gang^†

(color online) Schematics of the photoinduced electron/hole recombination (a) in the dark and under light irradiation condition (b). Equivalent resistance of the device (c) in the dark and (d) under light irradiation. Schematics of a sample with high intrinsic carrier concentration (e) in the dark and (f) the corresponding photoinduced electron/hole recombination under light irradiation condition.