Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device
Project supported by the National Natural Science Foundation of China (Grant Nos. 11574243 and 11174231).
(color online) (a) Measurement schematic diagram of the SI–GaAs-based device, (b) SEM cross-section image of the electrode, (c) energy diagram of Ag electrode and SI–GaAs semiconductor, and (d) V–I curves of an LED lamp bead under different magnetic fields.
