How to characterize capacitance of organic optoelectronic devices accurately<xref rid="cpb_27_6_067202_fn1" ref-type="fn">*</xref><fn id="cpb_27_6_067202_fn1"><label>*</label><p>Project supported by the Fundamental Research Funds for the Central Universities, China</p></fn>

How to characterize capacitance of organic optoelectronic devices accurately**

Project supported by the Fundamental Research Funds for the Central Universities, China

Yu Hao-Miao^{1, †}, He Yun^{2, ‡}

(color online) Curves of C–F characteristics versus frequency of ITO/Alq₃ (200 nm)/Al and ITO/CuPc (310 nm)/Al, with C_p and C_s being the capacitances measured under parallel and series model, respectively. Inset shows the equivalent circuit model with consideration of parasitical inductance of cables, and C is calculated from data measured under parallel model according to Eq. (1).