Pressure-induced enhancement of optoelectronic properties in PtS<sub>2</sub><xref rid="cpb_27_6_066201fn1" ref-type="fn">*</xref><fn id="cpb_27_6_066201fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0305700 and 2016YFA0401804), the National Natural Science Foundation of China (Grant Nos. 11574323, 11704387, U1632275, 11304321, 11604340, and 61774136), the Natural Science Foundation of Anhui Province, China (Grant No. 1708085QA19), and the Director’s Fund of Hefei Institutes of Physical Science, Chinese Academy of Sciences (Grant No. YZJJ201621).</p></fn>

Pressure-induced enhancement of optoelectronic properties in PtS₂**

Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0305700 and 2016YFA0401804), the National Natural Science Foundation of China (Grant Nos. 11574323, 11704387, U1632275, 11304321, 11604340, and 61774136), the Natural Science Foundation of Anhui Province, China (Grant No. 1708085QA19), and the Director’s Fund of Hefei Institutes of Physical Science, Chinese Academy of Sciences (Grant No. YZJJ201621).

Yuan Yi-Fang^{1, 2}, Zhang Zhi-Tao², Wang Wei-Ke³, Zhou Yong-Hui², Chen Xu-Liang², An Chao², Zhang Ran-Ran², Zhou Ying², Gu Chuan-Chuan², Li Liang⁴, Li Xin-Jian^{1, †}, Yang Zhao-Rong^{2, 5, ‡}

(a) in situ high-pressure synchrotron x-ray diffraction (XRD) patterns of PtS₂ up to 26.8 GPa. As an example, the fitting of the 0.3-GPa XRD data is shown at the bottom, where experimental data in black circle, best fit in solid red curve, allowed reflections in blue tick marks, and the difference between the observed and calculated profiles in green curve (b). Pressure dependence of the lattice constants a, c, and c = a, as well as the cell volume in panel (c).