Pressure-induced enhancement of optoelectronic properties in PtS<sub>2</sub><xref rid="cpb_27_6_066201fn1" ref-type="fn">*</xref><fn id="cpb_27_6_066201fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0305700 and 2016YFA0401804), the National Natural Science Foundation of China (Grant Nos. 11574323, 11704387, U1632275, 11304321, 11604340, and 61774136), the Natural Science Foundation of Anhui Province, China (Grant No. 1708085QA19), and the Director’s Fund of Hefei Institutes of Physical Science, Chinese Academy of Sciences (Grant No. YZJJ201621).</p></fn>

Pressure-induced enhancement of optoelectronic properties in PtS₂**

Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0305700 and 2016YFA0401804), the National Natural Science Foundation of China (Grant Nos. 11574323, 11704387, U1632275, 11304321, 11604340, and 61774136), the Natural Science Foundation of Anhui Province, China (Grant No. 1708085QA19), and the Director’s Fund of Hefei Institutes of Physical Science, Chinese Academy of Sciences (Grant No. YZJJ201621).

Yuan Yi-Fang^{1, 2}, Zhang Zhi-Tao², Wang Wei-Ke³, Zhou Yong-Hui², Chen Xu-Liang², An Chao², Zhang Ran-Ran², Zhou Ying², Gu Chuan-Chuan², Li Liang⁴, Li Xin-Jian^{1, †}, Yang Zhao-Rong^{2, 5, ‡}

(a) Photocurrent of the PtS₂ device measured under applied pressures of 1.8 GPa, 3.2 GPa, and 4.2 GPa. (b) The photocurrent as a function of bias-voltage under pressures of 1.4 GPa and 3.2 GPa. (c) Time-resolved photoresponse recorded at V_ds = 0.1 V. (d) The photocurrent as a function of applied pressure in compression (com.) and decompression (decom.) processes.