Pressure-induced enhancement of optoelectronic properties in PtS<sub>2</sub><xref rid="cpb_27_6_066201fn1" ref-type="fn">*</xref><fn id="cpb_27_6_066201fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0305700 and 2016YFA0401804), the National Natural Science Foundation of China (Grant Nos. 11574323, 11704387, U1632275, 11304321, 11604340, and 61774136), the Natural Science Foundation of Anhui Province, China (Grant No. 1708085QA19), and the Director’s Fund of Hefei Institutes of Physical Science, Chinese Academy of Sciences (Grant No. YZJJ201621).</p></fn>

Pressure-induced enhancement of optoelectronic properties in PtS₂**

Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0305700 and 2016YFA0401804), the National Natural Science Foundation of China (Grant Nos. 11574323, 11704387, U1632275, 11304321, 11604340, and 61774136), the Natural Science Foundation of Anhui Province, China (Grant No. 1708085QA19), and the Director’s Fund of Hefei Institutes of Physical Science, Chinese Academy of Sciences (Grant No. YZJJ201621).

Yuan Yi-Fang^{1, 2}, Zhang Zhi-Tao², Wang Wei-Ke³, Zhou Yong-Hui², Chen Xu-Liang², An Chao², Zhang Ran-Ran², Zhou Ying², Gu Chuan-Chuan², Li Liang⁴, Li Xin-Jian^{1, †}, Yang Zhao-Rong^{2, 5, ‡}

(a) Schematic illustration of the structure of fabricated PtS₂ device. (b) The I–V curves of the PtS₂ device measured at room temperature under different applied pressures. (c) Pressure dependence of the room-temperature resistance of the PtS₂ device. Inset displays a microphotograph of the sample configuration in a DAC. (d) Temperature dependence of resistance measured under pressures of 1 atm (1 atm = 1.01325 × 10⁵ Pa). and 6 GPa.