Non-monotonic dependence of current upon i-width in silicon p–i

Non-monotonic dependence of current upon i-width in silicon p–i–n diodes

Pang Zheng-Peng, Wang Xin, Chen Jian, Yang Pan, Zhang Yang, Tian Yong-Hui, Yang Jian-Hong^†

(color online) Plots of current versus i-region width for different carrier lifetimes (s = 0.875).