Non-monotonic dependence of current upon i-width in silicon p–i–n diodes
(color online) Plots of concentration distribution p(x) versus position in the intrinsic region of p–i–n junction with τ = 1 × 10−8 s and s = 0.875.
Non-monotonic dependence of current upon i-width in silicon p–i–n diodes |
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(color online) Plots of concentration distribution p(x) versus position in the intrinsic region of p–i–n junction with τ = 1 × 10−8 s and s = 0.875. |
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