Non-monotonic dependence of current upon i-width in silicon p–i

Non-monotonic dependence of current upon i-width in silicon p–i–n diodes

Pang Zheng-Peng, Wang Xin, Chen Jian, Yang Pan, Zhang Yang, Tian Yong-Hui, Yang Jian-Hong^†

(color online) Plots of total (a) and recombination (b) currents versus i-layer thickness with different s values and N_D = 8 × 10¹⁶ cm⁻³ at V_bias = 0.8 V.