Non-monotonic dependence of current upon i-width in silicon p–i

Non-monotonic dependence of current upon i-width in silicon p–i–n diodes

Pang Zheng-Peng, Wang Xin, Chen Jian, Yang Pan, Zhang Yang, Tian Yong-Hui, Yang Jian-Hong^†

(color online) Pattern diagram of p–i–n diode. The doping concentrations of p- and n-layers are N_A and N_D, respectively. x = 0 and x = w are the doping boundaries.