Non-monotonic dependence of current upon i-width in silicon p–i

Non-monotonic dependence of current upon i-width in silicon p–i–n diodes

Pang Zheng-Peng, Wang Xin, Chen Jian, Yang Pan, Zhang Yang, Tian Yong-Hui, Yang Jian-Hong^†

(color online) [(a) and (b)] Measured I–V characteristics for dose I and dose II, respectively. [(c) and (d)] Current as a function of i-region width at a bias voltage of 1.0 V for dose I and dose II respectively.