Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool<xref rid="cpb_27_6_066105_fn1" ref-type="fn">*</xref><fn id="cpb_27_6_066105_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant No. 11505033), the Science and Technology Research Project of Guangdong Province, China (Grant Nos. 2015B090901048 and 2017B090901068), and the Science and Technology Plan Project of Guangzhou, China (Grant No. 201707010186).</p> </fn>

Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool* *

Project supported by the National Natural Science Foundation of China (Grant No. 11505033), the Science and Technology Research Project of Guangdong Province, China (Grant Nos. 2015B090901048 and 2017B090901068), and the Science and Technology Plan Project of Guangzhou, China (Grant No. 201707010186).

Lei Zhi-Feng^{1, 2}, Zhang Zhan-Gang^{2, †}, En Yun-Fei^{2, ‡}, Huang Yun²

(color online) RTSER versus depth of sensitive volume of BRAM of 65-nm FPGA at ground of New York City.