Electronic and magnetic properties of semihydrogenated, fully hydrogenated monolayer and bilayer MoN<sub>2</sub> sheets<xref rid="cpb_27_6_060306_fn1" ref-type="fn">*</xref> <fn id="cpb_27_6_060306_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11747168, 11604246, and 11704007), the Natural Science Foundation of Guizhou Provincial Education Department, China (Grant Nos. KY[2015]384, KY[2015]446, and KY[2017]053), the Natural Science Foundation of Guizhou Provincial Science and Technology Agency (Grant Nos. LH[2015]7232 and LH[2015]7228), and the Science Research Foundation of Tongren University, China (Grant No. trxyDH1529).</p> </fn>

Electronic and magnetic properties of semihydrogenated, fully hydrogenated monolayer and bilayer MoN₂ sheets* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 11747168, 11604246, and 11704007), the Natural Science Foundation of Guizhou Provincial Education Department, China (Grant Nos. KY[2015]384, KY[2015]446, and KY[2017]053), the Natural Science Foundation of Guizhou Provincial Science and Technology Agency (Grant Nos. LH[2015]7232 and LH[2015]7228), and the Science Research Foundation of Tongren University, China (Grant No. trxyDH1529).

She Yan-Chao¹, Wei Zhao², Luo Kai-Wu¹, Li Yong¹, Zhang Yun^{2, †}, Zhang Wei-Xi^{1, ‡}

(color online) Calculated electron localization functions (ELFs) of stable structures for (a) AB stacking MoN₂ and (b) AA stacking MoN₂. Plot is of the vertical plane cutting through two Mo atoms and four N atoms. Results indicate N–N nonbonding for AB stacking and bonding for AA stacking. Mo and N atoms are in blue and red, respectively.