Band offset and electronic properties at semipolar plane AlN(<inline-formula> <img src="cpb_27_5_058101_ieqn1.gif"/> </inline-formula>)/diamond heterointerface<xref rid="cpb_27_5_058101_fn1" ref-type="fn">*</xref> <fn id="cpb_27_5_058101_fn1"> <label>*</label> <p>Project supported by the Scholarship Council of China (Grant No. 201508340047), the Postdoctoral Science Foundation of China (Grant No. 2016M601993), the Postdoctoral Science Foundation of Anhui Province, China (Grant No. 2017B215), and the Anhui Province University Outstanding Talent Cultivation Program, China (Grant No. gxfxZD2016077).</p> </fn>

Band offset and electronic properties at semipolar plane AlN(

)/diamond heterointerface* *

Project supported by the Scholarship Council of China (Grant No. 201508340047), the Postdoctoral Science Foundation of China (Grant No. 2016M601993), the Postdoctoral Science Foundation of Anhui Province, China (Grant No. 2017B215), and the Anhui Province University Outstanding Talent Cultivation Program, China (Grant No. gxfxZD2016077).

Wu Kong-Ping^†, Ma Wen-Fei, Sun Chang-Xu, Chen Chang-Zhao, Ling Liu-Yi, Wang Zhong-Gen

(color online) Schematic representations of relative position of valence band and conduction-band edges of (a) N–AlN( )/HC(100), (b) N–AlN( )/C(100), and (c) Al–AlN( )/C(100) as obtained from the “bulk plus lineup” method.