Band offset and electronic properties at semipolar plane AlN(<inline-formula> <img src="cpb_27_5_058101_ieqn1.gif"/> </inline-formula>)/diamond heterointerface<xref rid="cpb_27_5_058101_fn1" ref-type="fn">*</xref> <fn id="cpb_27_5_058101_fn1"> <label>*</label> <p>Project supported by the Scholarship Council of China (Grant No. 201508340047), the Postdoctoral Science Foundation of China (Grant No. 2016M601993), the Postdoctoral Science Foundation of Anhui Province, China (Grant No. 2017B215), and the Anhui Province University Outstanding Talent Cultivation Program, China (Grant No. gxfxZD2016077).</p> </fn>

Band offset and electronic properties at semipolar plane AlN(

)/diamond heterointerface* *

Project supported by the Scholarship Council of China (Grant No. 201508340047), the Postdoctoral Science Foundation of China (Grant No. 2016M601993), the Postdoctoral Science Foundation of Anhui Province, China (Grant No. 2017B215), and the Anhui Province University Outstanding Talent Cultivation Program, China (Grant No. gxfxZD2016077).

Wu Kong-Ping^†, Ma Wen-Fei, Sun Chang-Xu, Chen Chang-Zhao, Ling Liu-Yi, Wang Zhong-Gen

(color online) Curves of plane-averaged electron density difference, Δρ(z), for systems (a) N–AlN( )/HC(100) and (b) N–AlN( )/C(100) and (c) Al–AlN( )/C(100). Atom positions are indicated by solid circles, and q refers to charge transfer calculated by integrating Δρ(z) over the full z range. The vertical dashed line indicates interface.