Band offset and electronic properties at semipolar plane AlN(<inline-formula> <img src="cpb_27_5_058101_ieqn1.gif"/> </inline-formula>)/diamond heterointerface<xref rid="cpb_27_5_058101_fn1" ref-type="fn">*</xref> <fn id="cpb_27_5_058101_fn1"> <label>*</label> <p>Project supported by the Scholarship Council of China (Grant No. 201508340047), the Postdoctoral Science Foundation of China (Grant No. 2016M601993), the Postdoctoral Science Foundation of Anhui Province, China (Grant No. 2017B215), and the Anhui Province University Outstanding Talent Cultivation Program, China (Grant No. gxfxZD2016077).</p> </fn>

Band offset and electronic properties at semipolar plane AlN(

)/diamond heterointerface* *

Project supported by the Scholarship Council of China (Grant No. 201508340047), the Postdoctoral Science Foundation of China (Grant No. 2016M601993), the Postdoctoral Science Foundation of Anhui Province, China (Grant No. 2017B215), and the Anhui Province University Outstanding Talent Cultivation Program, China (Grant No. gxfxZD2016077).

Wu Kong-Ping^†, Ma Wen-Fei, Sun Chang-Xu, Chen Chang-Zhao, Ling Liu-Yi, Wang Zhong-Gen

(color online) Calculated atomic projected densities of states layer by layer for (a) N–AlN( )/HC(100), (b) N–AlN( )/C(100), and (c) Al–AlN( )/C(100). L denotes the number of atomic layers and increases with increasing separation from the interface. The vertical dashed line refers to Fermi level.