Effect of O–O bonds on p-type conductivity in Ag-doped ZnO twin grain boundaries<xref rid="cpb_27_5_057701fn1" ref-type="fn">*</xref> <fn id="cpb_27_5_057701fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant No. 11364009) and Natural Science Foundation of Guangxi Province, China (Grant No. 2014GXNSFFA118004).</p> </fn>

Effect of O–O bonds on p-type conductivity in Ag-doped ZnO twin grain boundaries* *

Project supported by the National Natural Science Foundation of China (Grant No. 11364009) and Natural Science Foundation of Guangxi Province, China (Grant No. 2014GXNSFFA118004).

Wu Jingjing^{1, 2}, Tang Xin^{1, 2, †}, Long Fei^{1, 2}, Tang Biyu³

(color online) DOSs of bulk ZnO, GB7a, GB7b, GB7c and GB7d. The VBM of bulk ZnO is chosen to be zero in energy level.