Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures
Li Xu-Yang1, Yu Zhi-Nong1, †, Cheng Jin1, Chen Yong-Hua1, Xue Jian-She2, Guo Jian1, 2, Xue Wei1
       

(color online) Transfer characteristics of TFTs based on (a) DIW-based and (b) 2-ME-based In2O3 channel layers at different annealing temperatures. The output characteristics of TFTs based on (c) DIW-based and (d) 2-ME-based In2O3 channel layers at different annealing temperatures.