Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures
Li Xu-Yang1, Yu Zhi-Nong1, †, Cheng Jin1, Chen Yong-Hua1, Xue Jian-She2, Guo Jian1, 2, Xue Wei1
       

(color online) AFM morphologies of (a) DIW-200, (b) DIW-250, (c) DIW-300, (d) DIW-350, (e) 2-ME-200, (f) 2-ME-250, (g) 2-ME-300, (h) 2-ME-350.