Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures
Li Xu-Yang1, Yu Zhi-Nong1, †, Cheng Jin1, Chen Yong-Hua1, Xue Jian-She2, Guo Jian1, 2, Xue Wei1
       

(color online) XPS data of O 1s analysis of (a) DIW-based and (b) 2-ME-based In2O3 thin-films at different annealing temperatures, and the dependence of (c) the relative peak area of the M–O–M and (d) the mobility of In2O3-TFT on annealing temperature.