Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures
Li Xu-Yang1, Yu Zhi-Nong1, †, Cheng Jin1, Chen Yong-Hua1, Xue Jian-She2, Guo Jian1, 2, Xue Wei1
       

(color online) Plots of (a) thickness and (b) refractive index versus temperature of DIW-based and 2-ME-based In2O3 thin-films at different annealing temperatures.