Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures
Li Xu-Yang
1
, Yu Zhi-Nong
1, †
, Cheng Jin
1
, Chen Yong-Hua
1
, Xue Jian-She
2
, Guo Jian
1, 2
, Xue Wei
1
(color online) TGA-DSC analyses of (a) DIW-based and (b) 2-ME-based In
2
O
3
precursor solutions.