Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high-<italic>κ</italic> insulator<xref rid="cpb_27_4_048502fn1" ref-type="fn">*</xref> <fn id="cpb_27_4_048502fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 61404110) and the National Higher-education Institution General Research and Development Project, China (Grant No. 2682014CX097).</p></fn>

Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high-κ insulator* *

Project supported by the National Natural Science Foundation of China (Grant No. 61404110) and the National Higher-education Institution General Research and Development Project, China (Grant No. 2682014CX097).

Chen Xue¹, Wang Zhi-Gang^{1, †}, Wang Xi¹, B Kuo James²

(color online) FOM characteristics of the CHK-VDMOS and the HKP-VDMOS. (a) FOMs versus P1-region doping concentration (N_Aa) of the HKP-VDMOS and the CHK-VDMOS. FOMs versus N2-drift doping concentration (N_D2) of the HKP-VDMOS and the CHK-VDMOS. Length of the drift region (D_d) is 40 μm, N1-region doping concentration is 5 × 10¹⁴ cm⁻³. The relative permittivity of the HK-region is 200. (b) FOMs versus relative permittivity of insulator κ of the HKP-VDMOS and the CHK-VDMOS, and N1-region doping concentration is 5 × 10¹⁴ cm⁻³.