Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high-<italic>κ</italic> insulator<xref rid="cpb_27_4_048502fn1" ref-type="fn">*</xref> <fn id="cpb_27_4_048502fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 61404110) and the National Higher-education Institution General Research and Development Project, China (Grant No. 2682014CX097).</p></fn>

Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high-κ insulator* *

Project supported by the National Natural Science Foundation of China (Grant No. 61404110) and the National Higher-education Institution General Research and Development Project, China (Grant No. 2682014CX097).

Chen Xue¹, Wang Zhi-Gang^{1, †}, Wang Xi¹, B Kuo James²

(color online) Characteristics of BV and R_on,sp for the CHK-VDMOS and the HKP-VDMOS based on the theoretical result. (a) BV and R_on,sp versus N2-drift doping concentration (N_D2), length of drift region (D_d) is 40 μm, N1-region doping concentration is 5 × 10¹⁴ cm⁻³, and relative permittivity of HK-region is 200; (b) BV and R_on,sp versus P1-region doping concentration (N_A), and N1-region doping concentration is 5 × 10¹⁴ cm⁻³; (c) BV and R_on,sp versus relative permittivity κ and N1-region doping concentration is 5 × 10¹⁴ cm⁻³.