Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high-<italic>κ</italic> insulator<xref rid="cpb_27_4_048502fn1" ref-type="fn">*</xref> <fn id="cpb_27_4_048502fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 61404110) and the National Higher-education Institution General Research and Development Project, China (Grant No. 2682014CX097).</p></fn>

Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high-κ insulator* *

Project supported by the National Natural Science Foundation of China (Grant No. 61404110) and the National Higher-education Institution General Research and Development Project, China (Grant No. 2682014CX097).

Chen Xue¹, Wang Zhi-Gang^{1, †}, Wang Xi¹, B Kuo James²

(color online) Variations of ΔE_y and ΔBV_y at locations x = −0.5 μm and x = −3 μm with distance along the y aixs. Length of drift region (D_d) is 40 μm, P1-region doping concentration is 4 × 10¹⁵ cm⁻³, N1-region doping concentration is 5 × 10¹⁴ cm⁻³, and relative permittivity of the HK-region is 200.