Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high-κ insulator*

Project supported by the National Natural Science Foundation of China (Grant No. 61404110) and the National Higher-education Institution General Research and Development Project, China (Grant No. 2682014CX097).

Chen Xue1, Wang Zhi-Gang1, †, Wang Xi1, B Kuo James2
       

(color online) (a) Electric field distributions along the y axis at location x = −3 μm based on the analytical model and Medici simulation results. (b) Electric field profile along the y axis at location at x = −0.5 μm. Length of drift region (Dd) is 40 μm, P1-region doping concentration is 4 × 1015 cm−3, N1-region doping concentration is 5 × 1014 cm−3, N2-region doping concentration is 9 × 1015 cm−3, and relative permittivity of the HK insulator is 200.