Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high-κ insulator*

Project supported by the National Natural Science Foundation of China (Grant No. 61404110) and the National Higher-education Institution General Research and Development Project, China (Grant No. 2682014CX097).

Chen Xue1, Wang Zhi-Gang1, †, Wang Xi1, B Kuo James2
       

(color online) Schematic cross section of the decomposition of the HKP-VDMOS into three unit cells with their boundary conditions for calculation of E-field and BV. These segmented structures are in correspondence with Fig. 3.