Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high-<italic>κ</italic> insulator<xref rid="cpb_27_4_048502fn1" ref-type="fn">*</xref> <fn id="cpb_27_4_048502fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 61404110) and the National Higher-education Institution General Research and Development Project, China (Grant No. 2682014CX097).</p></fn>

Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high-κ insulator* *

Project supported by the National Natural Science Foundation of China (Grant No. 61404110) and the National Higher-education Institution General Research and Development Project, China (Grant No. 2682014CX097).

Chen Xue¹, Wang Zhi-Gang^{1, †}, Wang Xi¹, B Kuo James²

(color online) Electric fields in vertical direction versus distance along the y axis of the HKP-VDMOS with a dielectric insulator having a relative permittivity of 200 and various p-region doping densities at location x = −1.9 μm. N_A is increased from 0.5 × 10¹⁵ cm⁻³ to 4.5 × 10¹⁵ cm⁻³, the electric field peak is generated in the drift region.