Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high-κ insulator*

Project supported by the National Natural Science Foundation of China (Grant No. 61404110) and the National Higher-education Institution General Research and Development Project, China (Grant No. 2682014CX097).

Chen Xue1, Wang Zhi-Gang1, †, Wang Xi1, B Kuo James2
       

(color online) Comparisons between the HKP-VDMOS and the CHK-VDMOS. (a) Gate-charging-transient curves for 10-mA gate-charging current. (b) Drain voltage and drain current during the turn-off transient. Length of the drift region (Dd) is 40 μm, P1-region doping concentration is 4 × 1015 cm−3, and relative permittivity of HK-region is 200.