Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high-<italic>κ</italic> insulator<xref rid="cpb_27_4_048502fn1" ref-type="fn">*</xref> <fn id="cpb_27_4_048502fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 61404110) and the National Higher-education Institution General Research and Development Project, China (Grant No. 2682014CX097).</p></fn>

Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal–oxide–semiconductor device with high-κ insulator* *

Project supported by the National Natural Science Foundation of China (Grant No. 61404110) and the National Higher-education Institution General Research and Development Project, China (Grant No. 2682014CX097).

Chen Xue¹, Wang Zhi-Gang^{1, †}, Wang Xi¹, B Kuo James²

(color online) (a) Schematic cross section of the HKP-VDMOS with the main N2-drift region, the low doping N1 region, the P-region, and the HK-region. (b) Schematic cross section of the CHK-VDMOS. An electric field peak is produced at the bottom of the P-type region for redistributing the vertical electric field.