Scalability of dark current in silicon PIN photodiode
Feng Ya-Jie1, 2, Li Chong2, Liu Qiao-Li2, Wang Hua-Qiang2, Hu An-Qi1, He Xiao-Ying2, †, Guo Xia1, ‡
       

(color online) Dark IV curves measured under the room temperature for Si photodiodes with L=0.25 mm, 0.5 mm, 1 mm, 1.5 mm, and 2 mm, respectively. (a) Forward biased. (b) Reverse biased. (c) Dependence of reverse current on the side length of the photosensitive area with reverse bias voltages of −1 V, −10 V, −20 V, and −30 V. The lines are the fitting curves according to Eq. (1).