Scalability of dark current in silicon PIN photodiode

Feng Ya-Jie^{1, 2}, Li Chong², Liu Qiao-Li², Wang Hua-Qiang², Hu An-Qi¹, He Xiao-Ying^{2, †}, Guo Xia^{1, ‡}

(color online) Cross-sectional diagram of Si PIN photodiode. Photosensitive area is covered by SiN antireflection coating layer with transmittance of 95.5%.