Fundamental and progress of Bi2Te3-based thermoelectric materials<xref rid="cpb_27_4_048403fn1" ref-type="fn">*</xref> <fn id="cpb_27_4_048403fn1"> <label>*</label> Project supported by the Australian Research Council. Zhi-Gang Chen thanks the USQ start-up grant and strategic research grant. </fn>

Fundamental and progress of Bi₂Te₃-based thermoelectric materials* *

Project supported by the Australian Research Council. Zhi-Gang Chen thanks the USQ start-up grant and strategic research grant.

Hong Min^{1, 2}, Chen Zhi-Gang^{1, 2, †}, Zou Jin^{2, 3, ‡}

(color online) The state-of-the-art zT values for n-type (a) Bi₂Te_2.7Se_0.3,^[37] Mg₂Sn_0.75Ge_0.25,^[25] PbSe_1−xBr_x,^[67] Yb_xCo₄Sb₁₂,^[68] and GeSi;^[69] p-type (b) Ge_0.89Sb_0.1In_0.01,^[47] Bi_0.5Sb_1.5Te₃,^[70] TePbTe_0.85Se_0.15,^[23] Sn_0.98Bi_0.02Te-(HgTe)_0.03,^[60] FeNb_0.8Ti_0.2Sb,^[71] AgSbTe_1.85Se_0.15,^[46] and GeSi.^[55] (c) Corresponding thermoelectric efficiency calculated using zT_avg values of these summarized materials. (d) The schematic diagram of a multi-layer thermoelectric device assembled from materials working at high (HT), mid (MT), and room (RT) temperatures along the thermal gradient from the hot side to the cold side.