Effects of growth conditions on optical quality and surface morphology of InGaAsBi

Li Jia-Kai^{1, 3}, Ai Li-Kun¹, Qi Ming¹, Xu An-Hui¹, Wang Shu-Min^{1, 2, †}

(color online) HRXRD (004) ω–2θ scans for InGaAsBi epilayers on InP with Bi content of 0% (a1), 0.7% (a2), 0.98% (a3), 0.99% (a4), and 1.13% (a5).