Off-stoichiometry indexation of BiFeO<sub>3</sub> thin film on silicon by Rutherford backscattering spectrometry

Off-stoichiometry indexation of BiFeO₃ thin film on silicon by Rutherford backscattering spectrometry

Wang Ze-Song^{1, †}, Xiao Ren-Zheng², Zou Chang-Wei¹, Xie Wei¹, Tian Can-Xin¹, Xue Shu-Wen¹, Liu Gui-Ang¹, Devi Neena³, Fu De-Jun³

(color online) (a) Room temperature C–V characteristics and (b) ferroelectric P–E hysteresis loops of BiFeO₃ thin films annealed at 550 °C and 600 °C.