Off-stoichiometry indexation of BiFeO<sub>3</sub> thin film on silicon by Rutherford backscattering spectrometry

Off-stoichiometry indexation of BiFeO₃ thin film on silicon by Rutherford backscattering spectrometry

Wang Ze-Song^{1, †}, Xiao Ren-Zheng², Zou Chang-Wei¹, Xie Wei¹, Tian Can-Xin¹, Xue Shu-Wen¹, Liu Gui-Ang¹, Devi Neena³, Fu De-Jun³

(color online) Experimental and simulated RBS spectra of BiFeO₃ thin films under annealing temperatures of (a) 100 °C, (b) 500 °C, (c) 600 °C, and (d) 650 °C.