Off-stoichiometry indexation of BiFeO3 thin film on silicon by Rutherford backscattering spectrometry
Wang Ze-Song1, †, Xiao Ren-Zheng2, Zou Chang-Wei1, Xie Wei1, Tian Can-Xin1, Xue Shu-Wen1, Liu Gui-Ang1, Devi Neena3, Fu De-Jun3
       

Surface morphological and cross-sectional SEM images of BiFeO3/Si annealed at ((a) and (b)) 500 °C and ((c) and (d)) 600 °C, respectively.