Off-stoichiometry indexation of BiFeO
3
thin film on silicon by Rutherford backscattering spectrometry
Wang Ze-Song
1, †
, Xiao Ren-Zheng
2
, Zou Chang-Wei
1
, Xie Wei
1
, Tian Can-Xin
1
, Xue Shu-Wen
1
, Liu Gui-Ang
1
, Devi Neena
3
, Fu De-Jun
3
(color online) XRD patterns of BiFeO
3
thin films annealed at 500 °C–650 °C.