Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate

Zhao Bin^{1, 2}, Hu Wei^{1, 2}, Tang Xian-Sheng^{1, 2}, Huo Wen-Xue^{1, 2}, Han Li-Li^{1, 2}, Zhao Ming-Long^{1, 2}, Ma Zi-Guang¹, Wang Wen-Xin¹, Jia Hai-Qiang¹, Chen Hong^{1, †}

(color online) (a) Photograph of a 2-inch (1 inch = 2.54 cm) thin film RLED wafer in natural state. (b) Microscope photograph of a 2×2 thin film RLED array, and the one on the right bottom with a bonded wire emitting red light at 2 A/cm². (c) Photograph of a 2-inch thin film RLED wafer forced into convex bending. (d) Schematic diagram of thin film RLED wafer bent over a mandrel, resulting in a central angle of θ for a square RLED.