Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs

Liu Ting-Ting¹, Zhang Kai^{2, †}, Zhu Guang-Run², Zhou Jian-Jun², Kong Yue-Chan², Yu Xin-Xin², Chen Tang-Sheng²

(color online) (a) Large-signal output power characteristics of (a) planar HEMT, (b) FinFET2, and (c) two-tone linearity measurements conducted at 4 GHz with 10-MHz tone spacing.