Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs
Liu Ting-Ting
1
, Zhang Kai
2, †
, Zhu Guang-Run
2
, Zhou Jian-Jun
2
, Kong Yue-Chan
2
, Yu Xin-Xin
2
, Chen Tang-Sheng
2
(color online) Changes of
f
T
with gate and drain voltage.
