Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs
Liu Ting-Ting1, Zhang Kai2, †, Zhu Guang-Run2, Zhou Jian-Jun2, Kong Yue-Chan2, Yu Xin-Xin2, Chen Tang-Sheng2
       

(color online) Sub-threshold characteristics of three types of devices investigated. Raw current values are given for clear comparison. Inset: gate diode leakage characteristics.